PDF IRFI4019H-117P Data sheet ( Hoja de datos )

Número de pieza	IRFI4019H-117P
Descripción	DIGITAL AUDIO MOSFET
Fabricantes	International Rectifier
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No Preview Available ! PD - 97074A IRFI4019H-117P DIGITAL AUDIO MOSFET Features Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDS(ON) for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low Qrr for Better THD and Lower EMI Can Delivery up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier Lead-Free Package Key Parameters h VDS 150 RDS(ON) typ. @ 10V 80 Qg typ. 13 Qsw typ. 4.1 RG(int) typ. 2.5 TJ max 150 V m: nC nC Ω °C D1 G1 S1/D2 G2 S2 TO-220 Full-Pak 5 PIN Description G1, G2 Gate D1, D2 Drain S1, S2 Source This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications. Absolute Maximum Ratings h Parameter Max. Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage 150 V ±20 ID @ TC = 25°C ID @ TC = 100°C IDM EAS PD @TC = 25°C PD @TC = 100°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current c Single Pulse Avalanche Energyd Power Dissipation f Power Dissipation f 8.7 A 6.2 34 77 mJ 18 W 7.2 Linear Derating Factor 0.15 W/°C TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting torque, 6-32 or M3 screw 10lbxin (1.1Nxm) Thermal Resistance h Parameter RθJC RθJA Junction-to-Case f Junction-to-Ambient f Notes through are on page 2 www.irf.com Typ. ––– ––– Max. 6.9 65 Units 1 8/22/06 Free Datasheet http://www.datasheet4u.net/ 1 page 0.5 ID = 5.2A 0.4 0.3 0.2 0.1 0.0 4 TJ = 125°C TJ = 25°C 56789 VGS, Gate-to-Source Voltage (V) 10 Fig 12. On-Resistance Vs. Gate Voltage IRFI4019H-117P 350 ID 300 TOP 0.91A 1.1A 250 BOTTOM 5.2A 200 150 100 50 0 25 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig 13. Maximum Avalanche Energy Vs. Drain Current D.U.T + Driver Gate Drive P.W. Period D= P.W. Period + - RG Circuit Layout Considerations • Low Stray Inductance - • Ground Plane • Low Leakage Inductance Current Transformer - + * • dv/dt controlled by RG • Driver same type as D.U.T. VDD ** + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test Reverse Recovery Current Re-Applied Voltage D.U.T. ISD Waveform Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Body Diode Forward Drop Inductor Curent Ripple ≤ 5% * Use P-Channel Driver for P-Channel Measurements Reverse Polarity for P-Channel * VGS = 5V for Logic Level Devices VGS*=10V VDD ISD Fig 14. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs www.irf.com 5 Free Datasheet http://www.datasheet4u.net/ 5 Page

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