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PDF K2368 Data sheet ( Hoja de datos )

Número de pieza K2368
Descripción MOSFET ( Transistor ) - 2SK2368
Fabricantes NEC 
Logotipo NEC Logotipo



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DATA SHEET
MOS FIELD EFFECT TRANSISTORS
2SK2367/2SK2368
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2367/2SK2368 is N-Channel MOS Field Effect Transistor
designed for high voltage switching applications.
FEATURES
Low On-Resistance
2SK2367: RDS (on) = 0.5 (VGS = 10 V, ID = 8.0 A)
2SK2368: RDS (on) = 0.6 (VGS = 10 V, ID = 8.0 A)
Low Ciss Ciss = 1 600 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage (2SK2367/2SK2368) VDSS 450/500 V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±15
A
Drain Current (pulse)*
ID (pulse) ±60
A
Total Power Dissipation (Tc = 25 ˚C) PT1 120 W
Total Power Dissipation (TA = 25 ˚C)
PT2
3.0 W
Channel Temperature
Tch 150 ˚C
Storage Temperature
Tstg –55 to +150 ˚C
Single Avalanche Current**
IAS 15 A
Single Avalanche Energy**
EAS 161 mJ
* PW 10 µs, Duty Cycle 1 %
** Starting Tch = 25 ˚C, RG = 25 , VGS = 20 V 0
PACKAGE DIMENSIONS
(in millimeter)
15.7 MAX. 3.2±0.2
4.7 MAX.
1.5
4
123
2.2±0.2
5.45
1.0±0.2 0.6±0.1 2.8±0.1
5.45
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
Drain
Gate
Body
Diode
Source
Document No. TC-2506
(O. D. No. TC-8065)
Date Published December 1994 P
Printed in Japan
©
19954
Free Datasheet http://www.datasheet4u.net/

1 page




K2368 pdf
2SK2367/2SK2368
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
1.5
1.0
ID = 10 A
5A
0.5
0
–50
0
VGS = 10 V
50 100 150
Tch - Channel Temperature - ˚C
10 000
1 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
100
Coss
Crss
10
1 10 100 1 000
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
1.0
VGS = 10 V
0.1
VGS = 0
0 0.5 1.0 1.5
VSD - Source to Drain Voltage - V
1 000
100
10
SWITCHING CHARACTERISTICS
tr
tf
td(on)
td(off)
1.0
0.1
VDS = 150 V
VGS = 10 V
RG = 10
1.0 10 100
ID - Drain Current - A
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
1 000
100
0.1
1.0 10
ID - Drain Current - A
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
400 16
ID = 10 A
VDD = 400 V
14
300 250 V
12
125 V
VGS 10
200 8
6
100 4
VDS 2
0 10 20 30 40
Qg - Gate Charge - nC
5
Free Datasheet http://www.datasheet4u.net/

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