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Número de pieza | FLM3135-8F | |
Descripción | C-Band Internally Matched FET | |
Fabricantes | Eudyna | |
Logotipo | ||
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No Preview Available ! FLM3135-8F
FEATURES
• High Output Power: P1dB = 39.5dBm (Typ.)
• High Gain: G1dB = 11.0dB (Typ.)
• High PAE: ηadd = 37% (Typ.)
• Low IM3 = -45dBc@Po = 28.5dBm
• Broad Band: 3.1 ~ 3.5GHz
• Impedance Matched Zin/Zout = 50Ω
• Hermetically Sealed Package
C-Band Internally Matched FET
DESCRIPTION
The FLM3135-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Unit
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with
gate resistance of 100Ω.
15
-5
42.8
-65 to +175
175
V
V
W
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
ηadd
Test Conditions
VDS = 5V, VGS = 0V
VDS = 5V, IDS = 2200mA
VDS = 5V, IDS = 180mA
IGS = -180µA
VDS =10V,
IDS = 0.55 IDSS (Typ.),
f = 3.1 ~ 3.5 GHz,
ZS=ZL= 50 ohm
Min.
-
-
-1.0
-5.0
38.5
10.0
-
-
Limit
Typ. Max.
3900 5850
2000 -
-2.0 -3.5
--
39.5 -
11.0 -
2200 2600
37 -
Unit
mA
mS
V
V
dBm
dB
mA
%
Gain Flatness
∆G
- - ±0.6
dB
3rd Order Intermodulation
Distortion
f = 3.5 GHz, ∆f = 10 MHz
IM3 2-Tone Test
Pout = 28.5dBm S.C.L.
-42 -45 -
dBc
Thermal Resistance
Rth Channel to Case
- 3.0 3.5
°C/W
Channel Temperature Rise
CASE STYLE: IB
∆Tch
10V x Idsr x Rth
- - 80
°C
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
Edition 1.0
December 2000
1
Free Datasheet http://www.datasheet4u.net/
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet FLM3135-8F.PDF ] |
Número de pieza | Descripción | Fabricantes |
FLM3135-8F | C-Band Internally Matched FET | Sumitomo |
FLM3135-8F | C-Band Internally Matched FET | Eudyna |
FLM3135-8F | C-Band Internally Matched FET | SUMITOMO |
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