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PDF FDA2712 Data sheet ( Hoja de datos )
| Número de pieza | FDA2712 | |
| Descripción | N-Channel UltraFET Trench MOSFET | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FDA2712
N-Channel UltraFET Trench MOSFET
250V, 64A, 34mΩ
April 2007
UltraFET
tm
Features
• RDS(on) = 29.2mΩ @VGS = 10 V, ID = 40A
• Fast switching speed
• Low gate charge
• High performance trench technology for extremely low RDS(on)
• High power and current handling capability
• RoHS compliant
Description
This N-Channel MOSFET is produced using Fairchild Semicon-
ductor’s advanced PowerTrench process that has been especial-
ly tailored to minimize the on-state resistance and yet maintain
superior switching performance.
Applications
• PDP application
D
GDS
TO-3PN
MOSFET Maximum Ratings
Symbol
VDSS
VGSS
ID
IDM
EAS
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
S
(Note 1)
(Note 2)
(Note 3)
Ratings
250
±30
64
44
240
245
4.5
357
2.85
-55 to +150
300
Ratings
0.35
40
Units
V
V
A
A
mJ
V/ns
W
W/oC
oC
oC
Units
oC/W
©2007 Fairchild Semiconductor Corporation
FDA2712 Rev. A
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page  
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDA2712 Rev. A
5 www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet FDA2712.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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