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Numéro de référence | PD1503YVS | ||
Description | Dual N-Channel Enhancement Mode Field Effect Transistor | ||
Fabricant | Niko-Sem | ||
Logo | |||
NIKO-SEM
Dual N-Channel Enhancement Mode Field
PD1503YVS
Effect Transistor
SOP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V(BR)DSS RDS(ON)
Q2 30V 15.8mΩ
Q1 30V 21mΩ
ID
9A
8A
1
2 Q1
3
Q2
4
8
7
6
5
G : GATE
D : DRAIN
S : SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
TA = 25 °C
TA = 70 °C
L = 0.1mH
TA = 25 °C
TA = 70 °C
VDS
VGS
ID
IDM
IAS
EAS
PD
Tj, Tstg
Q2 Q1
30 30
±20 ±20
98
76
35 30
29 21
43 23
2
1.28
-55 to 150
UNITS
V
V
A
mJ
W
°C
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Reverse Current
Forward Voltage
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
VR = 25V
IF = 1A
SYMBOL
IR
VF
TYPICAL
Junction-to-Ambient
RJA
1Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250A
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250A
Schottky
0.05
0.45
UNITS
mA
V
MAXIMUM
62.5
UNITS
°C / W
LIMITS
UNIT
MIN TYP MAX
Q2 30
Q1 30
Q2 1 1.7
Q1 1 2
3
3
V
REV 0.9
Oct-28-2009
1
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 7 | ||
Télécharger | [ PD1503YVS ] |
No | Description détaillée | Fabricant |
PD1503YVS | Dual N-Channel Enhancement Mode MOSFET | UNIKC |
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