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PDF K3498 Data sheet ( Hoja de datos )

Número de pieza K3498
Descripción MOSFET ( Transistor ) - 2SK3498
Fabricantes Toshiba Semiconductor 
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No Preview Available ! K3498 Hoja de datos, Descripción, Manual

2SK3498
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3498
DC-DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
Low drain-source ON resistance: RDS (ON) = 4.0 (typ.)
High forward transfer admittance: Yfs= 0.6 S (typ.)
Low leakage current: IDSS = 100 µA (max) (VDS = 400 V)
Enhancement-model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Tc = 25°C)
Characteristics
Drain-source voltage
Drain-gate voltage (RGS = 20 k)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
Rating
400
400
±30
1
3
20
113
1
2
150
55 to150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
6.25
125
°C/W
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 183 mH, RG = 25 ,
IAR = 1 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
JEDEC
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
2002-02-27
Free Datasheet http://www.datasheet4u.com/

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