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RB751SM-40 fiches techniques PDF

ROHM Semiconductor - Schottky Barrier Diode

Numéro de référence RB751SM-40
Description Schottky Barrier Diode
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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RB751SM-40 fiche technique
Data Sheet
Schottky Barrier Diode
RB751SM-40
lApplications
High speed switching
lDimensions (Unit : mm)
0.8±0.05
0.12±0.05
lFeatures
1)Ultra small mold type. (EMD2)
2)High reliability
lConstruction
Silicon epitaxial
0.3±0.05
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory)
0.6±0.1
lTaping specifications (Unit : mm)
lLand size figure (Unit : mm)
0.8
EMD2
lStructure
lAbsolute maximum ratings (Ta=25°C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current
VRM
VR
Io
Forward current surge peak (60Hz1cyc)
Junction temperature
IFSM
Tj
Storage temperature
Tstg
Limits
40
30
30
200
150
-40 to +150
Unit
V
V
mA
mA
°C
°C
lElectrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
VF -
IR -
- 0.37
- 0.5
Capacitance between terminals
Ct
-
2
-
Unit Conditions
V IF=1mA
μA VR=30V
pF VR=1V , f=1MHz
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/3
2011.06 - Rev.A
Free Datasheet http://www.datasheet4u.com/

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