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PDF K3480 Data sheet ( Hoja de datos )
| Número de pieza | K3480 | |
| Descripción | MOSFET ( Transistor ) - 2SK3480 | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTORwww.DataSheet4U.com
2SK3480
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3480 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Super low on-state resistance:
RDS(on)1 = 31 mΩ MAX. (VGS = 10 V, ID = 25 A)
RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 25 A)
• Low Ciss: Ciss = 3600 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3480
TO-220AB
2SK3480-S
TO-262
2SK3480-ZJ
2SK3480-Z
TO-263
TO-220SMDNote
Note TO-220SMD package is produced only
in Japan.
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±50
±100
Total Power Dissipation (TC = 25°C)
PT1
84
Total Power Dissipation (TA = 25°C)
PT2
1.5
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
Single Avalanche Current Note2
Single Avalanche Energy Note2
IAS 34
EAS 116
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-262)
(TO-263, TO-220SMD)
THERMAL RESISTANCE
Channel to Case
Channel to Ambient
Rth(ch-C)
Rth(ch-A)
1.48 °C/W
83.3 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15078EJ1V0DS00 (1st edition)
Date Published December 2001 NS CP(K)
Printed in Japan
©
2001
Free Datasheet http://www.datasheet4u.com/
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
70
Pulsed
60
50
40 VGS = 4.5 V
30 10 V
20
10
0
−50
ID = 25 A
0 50 100 150
Tch - Channel Temperature - ˚C
10000
1000
100
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
Ciss
Coss
Crss
VGS = 0 V
10 f = 1 MHz
0.01 0.1 1 10
VDS - Drain to Source Voltage - V
100
2SK3480
www.DataSheet4U.com
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Pulsed
100
VGS = 10 V
10 0 V
1
0.10 0.5 1.0
VSD - Source to Drain Voltage - V
1.5
1000
SWITCHING CHARACTERISTICS
100
td(off)
td(on)
10
tr
VDD = 50 V
VGS = 10 V
1 RG = 0 Ω
0.1
1
10
ID - Drain Current - A
tf
100
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/ns
VGS = 0 V
100
10
1
0.1 1 10 100
IF - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
100 10
80
VDD = 80 V
50 V
60 20 V
8
VGS
6
40 4
20 2
VDS
0 ID = 83 A 0
0 20 40 60 80
QG - Gate Charge - nC
Data Sheet D15078EJ1V0DS
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet K3480.PDF ] | |
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