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IPD80N06S3-09 fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPD80N06S3-09
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPD80N06S3-09 fiche technique
IPD80N06S3-09
OptiMOS®-T Power-Transistor
Features
• N-channel - Normal Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• Ultra low Rds(on)
• 100% Avalanche tested
Product Summary
V DS
R DS(on),max
ID
55 V
8.4 m
80 A
PG-TO252-3-11
Type
IPD80N06S3-09
Package
Marking
PG-TO252-3-11 QN0609
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse2) E AS I D=40 A
Avalanche current, single pulse
I AS
Gate source voltage3)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
80
48
320
240
80
±20
107
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2007-11-07
Free Datasheet http://www.datasheet4u.com/

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