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PDF IPD800N06NG Data sheet ( Hoja de datos )
| Número de pieza | IPD800N06NG | |
| Descripción | Power-Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IPD800N06NG (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
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OptiMOS® Power-Transistor
Features
• For fast switching converters and sync. rectification
• N-channel enhancement - normal level
• 175 °C operating temperature
• Avalanche rated
• Pb-free lead plating, RoHS compliant
Product Summary
V DS
R DS(on),max
ID
IPD800N06N G
60 V
80 mΩ
16 A
Type
IPD800N06N G
Package
Marking
PG-TO252-3
800N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C
T C=100 °C
Pulsed drain current
I D,pulse T C=25 °C1)
Avalanche energy, single pulse
E AS I D=16 A, R GS=25 Ω
Reverse diode dv /dt
dv /dt
I D=16 A, V DS=48 V,
di /dt =200 A/µs,
T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) See figure 3
Rev.1.3
page 1
Value
16
11
64
43
6
±20
47
-55 ... 175
55/175/56
Unit
A
mJ
kV/µs
V
W
°C
2008-09-01
Free Datasheet http://www.datasheet4u.com/
1 page  
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
30
20 V
10 V
7V
IPD800N06N G
6 Typ. drain-source on resistance
R DS(on)=f(I D); T j=25 °C
parameter: V GS
250
5V
200
20 6.5 V
5.5 V
150
6V
10
5.5 V
5V
4.5 V
0
012345
V DS [V]
100
50
0
0
6V
6.5 V
7V
10 V
20 V
10 20
I D [A]
7 Typ. transfer characteristics
I D=f(V GS); |V DS|>2|I D|R DS(on)max
parameter: T j
20
8 Typ. forward transconductance
g fs=f(I D); T j=25 °C
20
30
15
10
5
0
0
Rev.1.3
16
12
8
175 °C
25 °C
24
V GS [V]
6
4
0
0
page 5
10 20
I D [A]
30
2008-09-01
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IPD800N06NG.PDF ] | |
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