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Numéro de référence | FDMC8327L | ||
Description | MOSFET ( Transistor ) | ||
Fabricant | Fairchild Semiconductor | ||
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1 Page
May 2012
FDMC8327L
N-Channel PowerTrench® MOSFET
40 V, 14 A, 9.7 mΩ
Features
Max rDS(on) = 9.7 mΩ at VGS = 10 V, ID = 12 A
Max rDS(on) = 12.5 mΩ at VGS = 4.5 V, ID = 10 A
Low Profile - 0.8mm max in Power 33
100% UIL test
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
DC-DC Conversion
Top
8765
Bottom
DD D D
S
S
D
D
SD
1 234
GS S S
MLP 3.3x3.3
G
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (Package limited)
- Continuous (Silicon limited)
- Continuous
- Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
40
±20
14
43
12
60
25
30
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1)
(Note 1a)
4.2
53
°C/W
Device Marking
FDMC8327L
Device
FDMC8327L
Package
Power 33
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMC8327L Rev.C1
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 7 | ||
Télécharger | [ FDMC8327L ] |
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