DataSheetWiki


BD637 fiches techniques PDF

Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence BD637
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





1 Page

No Preview Available !





BD637 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
BD637
DESCRIPTION
·DC Current Gain -
: hFE = 40(Min.)@ IC= 25mA
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min.)
·Complement to Type BD638
APPLICATIONS
·Designed for amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
2A
ICM Collector Current-Peak
5A
IBB Base Current-Continuous
Collector Power Dissipation
@ Ta=25
PC
Collector Power Dissipation
@ TC=25
TJ Junction Temperature
Tstg Storage Temperature Range
0.3 A
2
W
30
150
-55~150
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/

PagesPages 2
Télécharger [ BD637 ]


Fiche technique recommandé

No Description détaillée Fabricant
BD63000MUV 3-phase brushless motor pre-driver ROHM Semiconductor
ROHM Semiconductor
BD63001AMUV Three-Phase Brushless Motor Predriver ROHM Semiconductor
ROHM Semiconductor
BD63002MUV 3-phase brushless motor pre-driver ROHM Semiconductor
ROHM Semiconductor
BD63005AMUV Three-Phase Brushless Motor Driver ROHM Semiconductor
ROHM Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche