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ROHM Semiconductor - (BD52xx / BD53xx) Free Delay Time Setting CMOS Voltage Detector IC

Numéro de référence BD5332
Description (BD52xx / BD53xx) Free Delay Time Setting CMOS Voltage Detector IC
Fabricant ROHM Semiconductor 
Logo ROHM Semiconductor 





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BD5332 fiche technique
Datasheet
Voltage Detector IC Series
Free Delay Time Setting
CMOS Voltage Detector IC Series
BD52xx series BD53xx series
General Description
Rohm's BD52xx and BD53xx series are highly
accurate, low current consumption Voltage Detector
ICs with a capacitor-controlled time delay. The line up
includes BD52xx devices with N channel open drain
output and BD53xx devices with CMOS output. The
devices are available for specific detection voltages
ranging from 2.3V to 6.0V in increments of 0.1V.
Features
Delay Time Controlled by external Capacitor
Two output types (N channel open drain and CMOS
output)
Ultra-low current consumption
Very small and low height package
Package SSOP5 is similar to SOT-23-5(JEDEC)
Typical Application Circuit
VDD1
VDD2
Key Specifications
Detection voltage:
2.3V to 6.0V (Typ.)
0.1V steps
High accuracy detection voltage:
±1.0%
Ultra-low current consumption:
0.95µA (Typ.)
Package
SSOP5:
2.90mm x 2.80mm x 1.25mm
VSOF5:
1.60mm x 1.60mm x 0.60mm
Applications
Circuits using microcontrollers or logic circuits that
require a reset.
VDD1
RL
BD52xx
RST
Micro
controller
CT
CL
(Capacitor for
noise filtering)
Open Drain Output type
BD52xx Series
Connection Diagram CT
SSOP5
N.C.
TOP VIEW
GND
CT
GND
VSOF5
TOP VIEW
BD53xx
RST
Micro
controller
CL
(Capacitor for
noise filtering)
CMOS Output type
BD53xx Series
VDD GND
54
Marking
Lot. No
Pin Descriptions
PIN No.
1
2
Symbol
VOUT
VDD
VOUT VDD GND
SSOP5
Function
Reset Output
Power Supply Voltage
3 GND
GND
4 N.C.
Unconnected Terminal
Capacitor connection terminal for
5 CT
output delay time
Marking 1 2 3
VOUT SUB CT
Lot. No
PIN No.
1
2
Symbol
VOUT
SUB
3 CT
4 GND
5 VDD
VSOF5
Function
Reset Output
Substrate*
Capacitor connection terminal for
output delay time
GND
Power Supply Voltage
*Connect the substrate to GND.
Product structureSilicon monolithic integrated circuit This product is not designed for protection against radioactive rays
.www.rohm.com
© 2013 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
1/13
TSZ02201-0R7R0G300040-1-2
22.May.2013 Rev.006
Free Datasheet http://www.datasheet4u.com/

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