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PDF IRF8852PBF Data sheet ( Hoja de datos )
| Número de pieza | IRF8852PBF | |
| Descripción | HEXFET Power MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 96246
IRF8852PbF
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Very Small SOIC Package
l Low Profile (< 1.1mm)
l Available in Tape & Reel
l Lead-Free
VDSS
25V
HEXFET® Power MOSFET
RDS(on) max
:11.3m @VGS = 10V
:15.4m @VGS = 4.5V
Id
7.8A
6.2A
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that
International Rectifier is well known for, provides the
designer with an extremely efficient and reliable
device for battery and load management.
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TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space is
at a premium. The low profile (<1.2mm) allows it to fit easily
into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
fPower Dissipation
fPower Dissipation
VGS
TJ
TSTG
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Max.
25
7.8
6.2
62.4
1.0
0.64
0.01
± 20
-55 to + 150
Units
V
A
W
W/°C
V
°C
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fRθJA Junction-to-Ambient
Typ.
–––
–––
Max.
53
125
Notes through
are on page 10
ORDERING INFORMATION:
See detailed ordering and shipping information on the last page of this data sheet.
www.irf.com
Units
°C/W
1
07/30/09
Free Datasheet http://www.datasheet4u.com/
1 page  
9
8
7
6
5
4
3
2
1
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
Fig 9. Maximum Drain Current vs.
Ambient Temperature
IRF8852PbF
25
ID = 7.8A
20
15 TJ = 125°C
TJ = 25°C
10
5
2 4 6 8 10
VGS, Gate -to -Source Voltage (V)
Fig 10. Typical On-Resistance Vs.
Gate Voltage
1000
100
D = 0.50
0.20
10
0.10
0.05
0.02
1 0.01
Ri (°C/W) τi (sec)
2.65337 0.00011
18.2380 0.027128
74.5829 0.64107
0.1 SINGLE PULSE
( THERMAL RESPONSE )
29.5446 11.11
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + TA
0.01
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10 100
t1 , Rectangular Pulse Duration (sec)
1000
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet IRF8852PBF.PDF ] | |
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