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Taiwan Semiconductor - (BAV19W-G - BAV21W-G) High Voltage Fast Switching Diode

Numéro de référence BAV20W-G
Description (BAV19W-G - BAV21W-G) High Voltage Fast Switching Diode
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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BAV20W-G fiche technique
Small Signal Product
CREAT BY ART
BAV19W-G/BAV20W-G/BAV21W-G
Taiwan Semiconductor
High Voltage Fast Switching Diode
FEATURES
- Fast switching device(trr<50ns)
- Surface mount device type
- Moisture sensitivity level 1
- Low reverse leakage
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
SOD-123
MECHANICAL DATA
- Case: Bend lead SOD-123 small outline plastic package
- Terminal: Matte tin plated, lead free, solderable
per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 10.5 ± 0.5 mg
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25unless otherwise noted)
PARAMETER
VALUE
SYMBOL
UNIT
BAV19W-G BAV20W-G BAV21W-G
Reverse voltage
Peak reverse voltage
Power dissipation
Average rectified output current
Repetitive peak forward current
VR 100 150 200 V
VRM 120 200 250 V
PD 500 mW
IO 200 mA
IFM 400 mA
Non-repetitive peak forward surge
current
@ tp=1.0ms; TA=25
IFSM
2.5 A
Thermal Resistance (Junction to Ambient)
Junction and Storage temperature range
RθJA
TJ , TSTG
250
-65 to +150
oC/W
oC
PARAMETER
BAV19W-G
Reverse voltage
BAV20W-G
BAV21W-G
IR=100μA
BAV19W-G VR=100V
Reverse leakage current
BAV20W-G VR=150V
BAV21W-G VR=200V
Forward voltage
IF = 100 mA
IF = 200 mA
Junction capacitance
VR = 0 , f = 1.0 MHz
Reverse Recovery Time
(Note)
Note: Test condition: IF= IR= 30mA , RL=100, IRR=3mA
SYMBOL
VBR
IR
VF
Cj
trr
MIN
120
200
250
-
-
-
-
-
-
-
MAX
-
-
-
0.1
1.00
1.25
5.0
50
UNIT
V
µA
V
pF
ns
Document Number: DS_S1404017
Version: C14

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