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MJ802 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Inchange Semiconductor - Silicon NPN Power Transistor

شماره قطعه MJ802
شرح مفصل Silicon NPN Power Transistor
تولید کننده Inchange Semiconductor 
آرم Inchange Semiconductor 


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MJ802 شرح
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
MJ802
DESCRIPTION
·High DC Current Gain-
: hFE= 25-100@IC= 7.5A
·Excellent Safe Operating Area
·Complement to Type MJ4502
APPLICATIONS
·Designed for use as an output device in complementary
audio amplifiers to 100-Watts music power per channel.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100 V
VCEO Collector-Emitter Voltage
90 V
VEBO Emitter-Base Voltage
4V
IC Collector Current-Continuous
30 A
IBB Base Current-Continuous
7.5 A
PC
Collector Power Dissipation@TC=25
200
W
TJ Junction Temperature
150
Tstg Storage Temperature Range
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
0.875
UNIT
/W
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/

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