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Numéro de référence | MJ8504 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 700V(Min)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCEV Collector-Emitter Voltage
1200
V
VCEO(SUS) Collector-Emitter Voltage
700 V
VEBO Emitter-Base Voltage
8V
IC Collector Current-Continuous
10 A
ICM Collector Current-Peak
15 A
IBB Base Current-Continuous
8A
IBM Base Current-Peak
12 A
PC Collector Power Dissipation@TC=25℃ 175
W
TJ Junction Temperature
200 ℃
Tstg Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.0
UNIT
℃/W
isc Product Specification
MJ8504
isc Website:www.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 2 | ||
Télécharger | [ MJ8504 ] |
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