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MJ8503 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Inchange Semiconductor - Silicon NPN Power Transistor

شماره قطعه MJ8503
شرح مفصل Silicon NPN Power Transistor
تولید کننده Inchange Semiconductor 
آرم Inchange Semiconductor 


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MJ8503 شرح
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
· Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 800V(Min)
·High Switching Speed
APPLICATIONS
·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ularly suited for line operated switch-mode applications.
Typical applications:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCEV Collector-Emitter Voltage
1400
V
VCEO(SUS) Collector-Emitter Voltage
800 V
VEBO Emitter-Base Voltage
8V
IC Collector Current-Continuous
5A
ICM Collector Current-Peak
10 A
IBB Base Current-Continuous
4A
IBM Base Current-Peak
8A
PC Collector Power Dissipation@TC=25150
W
TJ Junction Temperature
200
Tstg Storage Temperature
-65~200
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
1.16
UNIT
/W
isc Product Specification
MJ8503
isc Websitewww.iscsemi.cn
Free Datasheet http://www.datasheet4u.com/

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