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HFA32PA120C fiches techniques PDF

International Rectifier - Ultrafast/ Soft Recovery Diode

Numéro de référence HFA32PA120C
Description Ultrafast/ Soft Recovery Diode
Fabricant International Rectifier 
Logo International Rectifier 





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HFA32PA120C fiche technique
Bulletin PD -2.360 rev. B 05/01
HEXFREDTM
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
HFA32PA120C
Ultrafast, Soft Recovery Diode
2
13
per Leg
VR = 1200V
VF(typ.) = 2.3V
IF(AV) = 16A
Qrr (typ.)= 260nC
IRRM(typ.) = 5.8A
trr(typ.) = 30ns
Description
International Rectifier's HFA32PA120C is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 1200 volts and 16 amps continuous current, the HFA32PA120C
is especially well suited for use as the companion diode for IGBTs and
MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA32PA120C
is ideally suited for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
TO-247AC
Absolute Maximum Ratings (per Leg)
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
* 125°C
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
www.irf.com
Max
1200
16
190
64
151
60
-55 to +150
Units
V
A
°C
W
1

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