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PDF HFA25TB60 Data sheet ( Hoja de datos )
| Número de pieza | HFA25TB60 | |
| Descripción | Ultrafast/ Soft Recovery Diode | |
| Fabricantes | International Rectifier | |
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PD -2.339
HFA25TB60
HEXFREDTM
Ultrafast, Soft Recovery Diode
Features
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
Very Low Qrr
Guaranteed Avalanche
Specified at Operating Conditions
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Description
International Rectifier's HFA25TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 25 amps continuous current, the HFA25TB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (IRRM) and does not exhibit any
tendency to "snap-off" during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA25TB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency
is needed.
VR = 600V
VF(typ.)* = 1.3V
IF(AV) = 25A
Qrr (typ.)= 112nC
IRRM = 10A
trr(typ.) = 23ns
di(rec)M/dt (typ.) = 250A/µs
TO-220AC
Absolute Maximum Ratings
VR
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
IFRM
IAR
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Repetitive Avalanche Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
600
25
225
100
2.0
125
50
-55 to +150
Units
V
A
W
C
* 125°C
4/2/97
1 page  
HFA25TB60
REVERSE RECOVERY CIRCUIT
VR = 200V
L = 70µH
0.01 Ω
D.U.T.
dif/dt
ADJUST G
D
IRFP250
S
IF
0
3
trr
ta
tb
2
I RRM
4
Qrr
0.5 I RRM
di(rec)M/dt
5
0.75 I RRM
1 dif /dt
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by trr
and IRRM
t rr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Parameter Test
Circuit
Fig. 10 - Reverse Recovery Waveform and
Definitions
DUT
CURRENT
MONITOR
L = 100µH
Rg = 25 ohm
HIGH-SPEED
SW ITCH
FR EE-W HEEL
DIODE
+
Vd = 50V
I L(PK)
V (AVAL)
V R(RATED)
DE CAY
TIME
Fig. 11 - Avalanche Test Circuit and Waveforms
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HFA25TB60.PDF ] | |
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