DataSheetWiki


HFA16PA120C fiches techniques PDF

International Rectifier - HEXFRED Ultrafast/ Soft Recovery Diode

Numéro de référence HFA16PA120C
Description HEXFRED Ultrafast/ Soft Recovery Diode
Fabricant International Rectifier 
Logo International Rectifier 





1 Page

No Preview Available !





HFA16PA120C fiche technique
Bulletin PD -2.361 rev. B 05/01
HEXFREDTM
HFA16PA120C
Ultrafast, Soft Recovery Diode
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
2
13
Description
International Rectifier's HFA16PA120C is a state of the art ultra fast recovery diode.
Employing the latest in epitaxial construction and advanced processing techniques it
features a superb combination of characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic ratings of 1200 volts and
8 amps continuous current, the HFA16PA120C is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time, the
HEXFRED product line features extremely low values of peak recovery current (IRRM)
and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and heatsink
sizes. The HEXFRED HFA16PA120C is ideally suited for applications in power supplies
and power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
*
VR = 1200V
VF (max.) = 3.3V
IF (AV) = 8.0A
IRRM (typ.) = 4.5A
* per Leg
TO-247AC
Absolute Maximum Ratings (per Leg)
VR
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
www.irf.com
Max
1200
8
130
32
73.5
29
- 55 to 150
Units
V
A
W
°C
1

PagesPages 7
Télécharger [ HFA16PA120C ]


Fiche technique recommandé

No Description détaillée Fabricant
HFA16PA120C HEXFRED Ultrafast/ Soft Recovery Diode International Rectifier
International Rectifier

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche