HF5-12F Datasheet PDF - Advanced Semiconductor
| Part Number | HF5-12F | |
| Description | NPN SILICON RF POWER TRANSISTOR | |
| Manufacturers | Advanced Semiconductor | |
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HF5-12F
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF5-12F is Designed for
FEATURES:
• PG = 20 dB min. at 5 W/30 MHz
• IMD3 = -30 dBc max. at 5.0 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 4.5 A
VCBO
36 V
VCEO
18 V
VEBO
PDISS
TJ
T STG
θ JC
4.0 V
80 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
2.2 OC/W
PACKAGE STYLE .380 4L FLG
.112 x 45°
B
E
A
C
Ø.125 NOM.
FULL R
J
.125
BE
C
D
E
F
GH I
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .785 / 19.94
C .720 / 18.29
D .970 / 24.64
E
F .004 / 0.10
G .085 / 2.16
H .160 / 4.06
I
J .240 / 6.10
MAXIMUM
inches / mm
.230 / 5.84
.730 / 18.54
.980 / 24.89
.385 / 9.78
.006 / 0.15
.105 / 2.67
.180 / 4.57
.280 / 7.11
.255 / 6.48
ORDER CODE: ASI10590
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 50 mA
BVCEO
IC = 50 mA
BVCES
IC = 50 mA
BVEBO
IE = 5.0 mA
ICES VCE = 15 V
hFE VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
36
18
36
4.0
5.0
10 200
UNITS
V
V
V
V
mA
---
Cob VCB = 12.5 V
f = 1.0 MHz
100
pF
GP
IMD3
VCC = 12.5 V
ICQ = 25 mA
POUT = 5.0 Watts (PEP)
f = 30 MHz
15
18 dB
-30 dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for HF5-12F electronic component. |
| Information | Total 1 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ HF5-12F.PDF Datasheet ] | |
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