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PDF HF150-50S Data sheet ( Hoja de datos )
| Número de pieza | HF150-50S | |
| Descripción | NPN SILICON RF POWER TRANSISTOR | |
| Fabricantes | Advanced Semiconductor | |
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HF150-50S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF150-50S is Designed for
FEATURES:
• PG = 14 dB min. at 150 W/30 MHz
• IMD3 = 100 dBc max. at 150 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 10 A
VCBO
110 V
VEBO
4.0 V
VCEO
PDISS
TJ
T STG
θ JC
55 V
233 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
0.75 OC/W
PACKAGE STYLE .500 4L STUD (A)
.112 x 45°
A
C
Ø .630 NOM
BC E
E
D
B
E
G
1/4-28 UNF-2A
F
H
DIM
MINIMUM
inches / mm
A .220 / 5.59
B
C .545 / 13.84
D .495 / 12.57
E .003 / 0.08
F
G .185 / 4.70
H .497 / 12.62
MAXIMUM
inches / mm
.230 / 5.84
1.050 / 26.67
.555 / 14.10
.505 / 12.83
.007 / 0.18
.830 / 21.08
.198 / 5.03
.530 / 13.46
ORDER CODE: ASI10613
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 100 mA
BVCES
IC = 100 mA
BVCEO
IC = 100 mA
BVEBO
IE = 10 mA
ICEO
VCE = 30 V
ICES VE = 60 V
hFE VCE = 6 V
IC = 1.4 A
MINIMUM TYPICAL MAXIMUM
110
110
55
4.0
5
5
18 43.5
UNITS
V
V
V
V
mA
mA
---
Cob VCB = 50 V
f = 1.0 MHz
220 pF
GP
IMD3
ηC
VCE = 50 V
ICQ =100 mA
POUT = 150 W(PEP)
14
37
dB
-30 dBc
%
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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