|
|
Numéro de référence | HF15-28S | ||
Description | NPN SILICON RF POWER TRANSISTOR | ||
Fabricant | Advanced Semiconductor | ||
Logo | |||
HF15-28S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF15-28S is Designed for
FEATURES:
•
•
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 4.0 A
VCBO
65 V
VCEO
35 V
VEBO
PDISS
TJ
T STG
θ JC
4.0 V
40 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
4.4 OC/W
PACKAGE STYLE .380 4L STUD
.112x45°
A
BD
SS
ØC G
D
#8-32 UNC-2A
HI
J
G
F
E
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .980 / 24.89
C .370 / 9.40
D .004 / 0.10
E .320 / 8.13
F .100 / 2.54
G .450 / 11.43
H .090 / 2.29
I .155 / 3.94
J
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10603
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCEO
IC = 200 mA
BVCES
IC = 200 mA
BVEBO
IE = 10 mA
ICBO
VCB = 30 V
hFE VCE = 5.0 V
IC = 200 mA
MINIMUM TYPICAL MAXIMUM
35
65
4.0
2.0
5.0 ---
UNITS
V
V
V
mA
---
COB VCB = 30 V
f = 1.0 MHz
50 pF
GP VCE = 28 V
fT VCE = 10 V
IC = 200 mA
f = 150 MHz
f = 100 MHz
10
250
--- dB
MHz
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
|
|||
Pages | Pages 1 | ||
Télécharger | [ HF15-28S ] |
No | Description détaillée | Fabricant |
HF15-28F | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
HF15-28S | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |