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HF10-12S fiches techniques PDF

Advanced Semiconductor - NPN SILICON RF POWER TRANSISTOR

Numéro de référence HF10-12S
Description NPN SILICON RF POWER TRANSISTOR
Fabricant Advanced Semiconductor 
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HF10-12S fiche technique
HF10-12S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI HF10-12S is Designed for
FEATURES:
PG = 20 dB min. at 10 W/30 MHz
IMD3 = -30 dBc max. at 10 W(PEP)
Omnigold™ Metalization System
MAXIMUM RATINGS
IC 4.5 A
VCBO
36 V
VCEO
18 V
VEBO
PDISS
TJ
T STG
θ JC
4.0 V
80 W @ TC = 25 OC
-65 OC to +200 OC
-65 OC to +150 OC
2.2 OC/W
PACKAGE STYLE .380 4L STUD
.112x45°
A
C
B
EE
ØC
B
D
#8-32 UNC-2A
HI
J
G
F
E
DIM
MINIMUM
inches / mm
A .220 / 5.59
B .980 / 24.89
C .370 / 9.40
D .004 / 0.10
E .320 / 8.13
F .100 / 2.54
G .450 / 11.43
H .090 / 2.29
I .155 / 3.94
J
MAXIMUM
inches / mm
.230 / 5.84
.385 / 9.78
.007 / 0.18
.330 / 8.38
.130 / 3.30
.490 / 12.45
.100 / 2.54
.175 / 4.45
.750 / 19.05
ORDER CODE: ASI10593
CHARACTERISTICS TC = 25 OC
SYMBOL
NONETEST CONDITIONS
BVCBO
IC = 50 mA
BVCES
IC = 50 mA
BVCEO
IC = 50 mA
BVEBO
IE = 10 mA
ICES VCE = 15 V
hFE VCE = 5.0 V
IC = 1.0 A
MINIMUM TYPICAL MAXIMUM
36
36
18
4.0
5
10 200
UNITS
V
V
V
mA
---
Cob VCB = 12.5 V
f = 1.0 MHz
100
pF
GP
IMD3
VCC = 12.5V
POUT = 10 W(PEP)
ICQ = 25 mA
f = 30 MHz
15
18 dB
-30 dBc
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1

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