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PDF MBR20200CT Data sheet ( Hoja de datos )
| Número de pieza | MBR20200CT | |
| Descripción | Dual High Voltage Schotty Rectifier | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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MBR20200CT
Dual High Voltage Schotty Rectifier
Features:
• Low Forward Voltage Drop
• Low Power Loss and High Efficiency
• High Surge Capability
• Rohs Compliant
• Matte Tin(Sn) Lead Finish
• Terminal Leads Surface is Corrosion Resistant and can withstand to 260°C
• Wave Soldering or per MIL-STD-750 Method 2026.
1
Mark : MBR20200CT
August 2008
+
PIN1
PIN3
_
PIN2
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
VRRM
VR
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
IF(AV)
Average Rectified Forward Current, Tc=115°C
IFSM
Peak Forward Surge Current, 8.3mS Half Sine wave
TSTG
Storage Temperature Range
TJ Operating Junction Temperature
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
200
200
10 (Per Leg)
20(Per Device)
150
-55 ~ 150
150
Unit
V
V
A
A
°C
°C
Thermal Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
RθJC
Thermal Resistance, Junction to Case per Leg
RθJA
Thermal Resistance, Junction to Ambient per Leg
* MIL standard 883-1012 & JESD51-10
Max
1.5
62.5
Unit
°C/W
°C/W
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
IR
Reverse Current
VR= 200V
VR= 200V
IF= 10A
VF
Forward Voltage
IF= 10A
IF= 20A
IF= 20A
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
Min.
Max.
0.2
5
0.9
0.8
1.0
0.9
Unit
mA
V
© 2008 Fairchild Semiconductor Corporation
MBR20200CT Rev. 1.0.0
1
www.fairchildsemi.com
Free Datasheet http://www.datasheet4u.com/
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet MBR20200CT.PDF ] | |
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