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Thinki Semiconductor - (2A01 - 2A07) 2.0 Ampere DO-15 Package General Purpose Rectifiers

Numéro de référence 2A02
Description (2A01 - 2A07) 2.0 Ampere DO-15 Package General Purpose Rectifiers
Fabricant Thinki Semiconductor 
Logo Thinki Semiconductor 





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2A02 fiche technique
2A01 thru 2A07
®
Pb Free Plating Product
2A01 thru 2A07
2.0 Ampere DO-15 Package General Purpose Rectifiers
Pb
Features
DO-15
Unit: inch(mm)
Diffused junction
High current capability and low forward
voltage drop
Surge overload rating to 70A peak
.034(.86)
.028(.71)
Mechanical Data
Case: Molded plastic
Terminates: Plated leads solderable per
MIL-STD-202, Method 208
Polarity: Cathode band
Mounting position: Any
Marking: Type number
.140(3.6)
.104(2.6)
Absolute Maximum Ratings and Characteristics
Ratings at 250C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
Symbols 2A01 2A02 2A03 2A04 2A05 2A06 2A07 Units
Maximum peak repetitive reverse voltage
VRRM
50 100 200 400 600
Maximum working peak reverse voltage
VRWM 50 100 200 400 600
Maximum DC blocking voltage
VR 50 100 200 400 600
Maximum RMS reverse voltage
Maximum average rectified output current(1)
OC
@TA=55
VR(RMS)
IO
35
70 140 280 420
2
Non-repetitive peak forward surge current 8.3ms single
half sine-wave superimposed on rated load
(JEDEC method)
IFSM
70
Maximum forward voltage
Maximum peak reverse current
at rated DC blocking voltage
@ IF= 2A
@TA = 25 OC
@TA = 100OC
VFM
IRM
1.1
5
50
I2t rating for fusing (t<8.3ms)
I2t 17.5
Typical junction capacitance (2)
Typical thermal resistance junction to ambient(1)
CJ
RθJA
15
60
Operating and Storage temperature range
TJ, TS
-65 to+150
Notes: 1.Leads maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1MHz and applied reverse voltage of 4V DC
800 1000 Volts
800 1000 Volts
800 1000 Volts
560 700 Volts
Amps
Amps
Volts
µA
µA
A2s
pF
K/W
OC
© 2006 Thinki Semiconductor Co.,Ltd.
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http://www.thinkisemi.com/
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