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Thinki Semiconductor - (SF1601G - SF1608G) 16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes

Numéro de référence SF1605G
Description (SF1601G - SF1608G) 16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes
Fabricant Thinki Semiconductor 
Logo Thinki Semiconductor 





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SF1605G fiche technique
SF1601G thru SF1608G
®
SF1601G thru SF1608G
Pb
Pb Free Plating Product
16.0 Ampere Glass Passivated Super Fast Recovery Rectifier Diodes
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Application
Automotive Environment|DC Motor Control
Plating Power Supply|UPS
Amplifier and Sound Device System
Mechanical Data
Case: Molded plastic TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.03 gram approximately
TO-220AB
.419(10.66)
.387(9.85)
.139(3.55)
MIN
Unit : inch (mm)
.196(5.00)
.163(4.16)
.054(1.39)
.045(1.15)
.038(0.96)
.019(0.50)
.1(2.54)
.1(2.54)
.025(0.65)MAX
Case
Positive
Common Cathode
Case
Negative
Common Anode
Suffix "A"
Case
Doubler
Series Connection
Suffix "D"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode
Common Anode Suffix "A"
Anode and Cathode Coexistence Suffix "D"
Maximum Recurrent Peak Reverse Voltage
SF1601G SF1602G SF1604G SF1605G SF1606G SF1608G
SYMBOL SF1601GA SF1602GA SF1604GA SF1605GA SF1606GA SF1608GA UNIT
SF1601GD SF1602GD SF1604GD SF1605GD SF1606GD SF1608GD
VRRM
50
100 200 300 400 600 V
Maximum RMS Voltage
VRMS
35
70 140 210 280 420 V
Maximum DC Blocking Voltage
VDC 50 100 200 300 400 600 V
Maximum Average Forward Rectified
Current TC=100oC
IF(AV)
16.0 A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
IFSM
175
150 A
Maximum Instantaneous Forward Voltage
@ 8.0 A
VF
Maximum DC Reverse Current @TJ=25oC
At Rated DC Blocking Voltage @TJ=125oC
IR
Maximum Reverse Recovery Time (Note 1) Trr
Typical junction Capacitance (Note 2)
CJ
Typical Thermal Resistance (Note 3)
R JC
Operating Junction and Storage
Temperature Range
TJ, TSTG
0.98 1.3
10.0
250
35
90
2.2
-55 to + 150
1.7 V
uA
uA
nS
pF
oCW
oC
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
Free Datasheet http://www.datasheet4u.com/

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