DataSheetWiki


GBU25J fiches techniques PDF

Galaxy Semi-Conductor - (GBU25A - GBU25M) SILICON BRIDGE RECTIFIERS

Numéro de référence GBU25J
Description (GBU25A - GBU25M) SILICON BRIDGE RECTIFIERS
Fabricant Galaxy Semi-Conductor 
Logo Galaxy Semi-Conductor 





1 Page

No Preview Available !





GBU25J fiche technique
BL GALAXY ELECTRICAL
GBU25A --- GBU25M
SILICON BRIDGE RECT IFIERS
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 25.0 A
FEATURES
Ideal for printed circuit board
Reliable low cos t cons truction utilizing m olded
plas tic technique
Plas tic m aterrial has U/L flam m ability clas s ification
94V-O
Mounting pos ition: Any
GBU
.310(7.9)
.290(7.4)
.080(2.03)
.060(1.52)
.933(23.7)
.894(22.7)
.160(4.1)
.140(3.5)
+
+
.075(1.9)R.TYP.
_ ~ ~+
.185(4.7)
.165(4.2)
450
.085(2.16)
.065(1.65)
.740(18.8)
.720(18.3)
.100(2.54)
.085(2.16)
.190(4.83)
.210(5.33)
.050(1.27)
.040(1.02)
.710(18)
.690(17.5)
.140(3.56)
.130(3.30)
.085(2.18)
.075(1.90)
.022(.56)
.018(.46)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
GBU
25A
GBU
25B
GBU
25D
GBU GBU
25G 25J
GBU
25K
GBU
25M
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard Tc=100
output current
VRRM
V R MS
VDC
IF (AV)
50
35
50
100 200 400 600 800 1000
70 140 280 420 560 700
100 200 400 600 800 1000
25.0
V
V
V
A
Peak f orw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
IF SM
240.0
A
Maximum instantaneous f orw ard voltage
at 12.5 A
VF
1.0
V
Maximum reverse current
@TA=25
at rated DC blocking voltage @TA=125
Typical junction capacitance per leg (note 3)
IR
CJ
5.0
500.0
211
94
μA
mA
pF
Typical thermal resistance per leg
(note 2)
(note 1)
RθJA
RθJC
21.0
2.2
/W
Operating junction temperature range
TJ
- 55 ---- + 150
Storage temperature range
TSTG
- 55 ---- + 150
N OTE: 1. Unit case m ounted on 3.2x3.2x0.12" thick (6.2x8.2x0.3cm ) AI. Plate.
2. U nits m ounted in f ree air, no heat sink on P.C .B., 0.5x0.5"(12x12m m ) copper pads, 0.375"(9.5m m ) lead length.
3. Measured at 1.0 MH z and applied rev erse v oltage of 4.0 v olts.
www.galaxycn.com
Document Number 0287030
BLGALAXY ELECTRICAL
1.
Free Datasheet http://www.datasheet4u.com/

PagesPages 2
Télécharger [ GBU25J ]


Fiche technique recommandé

No Description détaillée Fabricant
GBU25005 (GBU10/15/25 Series) GLASS PASSIVATED BRIDGE RECTIFIERS HY ELECTRONIC
HY ELECTRONIC
GBU25005 (GBU25005 - GBU25010) Molding Single-Phase Bridge Rectifier SeCoS
SeCoS
GBU2501 (GBU10/15/25 Series) GLASS PASSIVATED BRIDGE RECTIFIERS HY ELECTRONIC
HY ELECTRONIC
GBU2501 (GBU25005 - GBU25010) Molding Single-Phase Bridge Rectifier SeCoS
SeCoS

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche