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DB104 fiches techniques PDF

Thinki Semiconductor - (DB101 - DB107) 1.0 AMP.DIP GLASS PASSIVATED BRIDGE RECTIFIERS

Numéro de référence DB104
Description (DB101 - DB107) 1.0 AMP.DIP GLASS PASSIVATED BRIDGE RECTIFIERS
Fabricant Thinki Semiconductor 
Logo Thinki Semiconductor 





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DB104 fiche technique
DB101 thru DB107
®
DB101 thru DB107
Pb Free Plating Product
Pb
1.0 AMP.DIP GLASS PASSIVATED BRIDGE RECTIFIERS
Features
Glass passivated chip junction
Low forward voltage drop
High surge overload rating of 50 A peak
Ideal for printed circuit board
Mechanical Data
Case: Molded plastic, DB
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per MIL-STD-202,
method 208 guaranteed
Mounting position: Any
DB-1
.335(8.51)
.316(8.05)
Unit : inch (mm)
.045(1.14)
.035(0.89)
.022(0.56)
.018(0.46)
.205(5.2)
.195(5.0)
.075(1.90)
.055(1.39)
Absolute Maximum Ratings and Characteristics
Ratings at 25 OC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or
inductive load. For capacitive load, derate current by 20%.
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at TA = 40 OC
Peak Forward Surge Current 8.3 ms Single Half-sine-wave
Superimposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 1 A
Maximum Reverse Current at Rated
DC Blocking Voltage
Typical Junction Capacitance 1)
at TA = 25 OC
at TA = 125 OC
Typical Thermal Resistance 2)
Typical Thermal Resistance 2)
Operating and Storage Temperature Range
Symbols DB101 DB102 DB103 DB104 DB105 DB106 DB107 Units
VRRM 50 100 200 400 600 800 1000 V
VRMS
VDC
I(AV)
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
1A
IFSM
50 A
VF
IR
CJ
RθJA
RθJL
TJ ,TS
1.1
5
500
25
40
15
-55 to +150
V
µA
pF
OC/W
OC/W
OC
1) Measured at 1 MHz and applied reverse voltage of 4 V
2) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B with 0.5 X 0.5" (13 X 13
mm) copper pads.
© 2006 Thinki Semiconductor Co.,Ltd.
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