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PDF 2SD1119 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1119 | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Kexin | |
| Logotipo |  |
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SMD Type
Transistors
Silicon NPN epitaxial planar type
2SD1119
Features
Low collector-emitter saturation voltage VCE(sat).
Satisfactory operation performances at high efficiency with
the lowvoltage power supply.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Rating
40
25
7
3
5
1
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-emitter voltage
Emitter-base voltage
Collector-base cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Testconditons
VCEO IC = 1 mA, IB = 0
VEBO IE = 10 ìA, IC = 0
ICBO VCB = 10 V, IB = 0
VCE = 2 V, IC = 0.5 A
hFE
VCE = 2 V, IC = 2 A
VCE(sat) IC = 3 A, IB = 0.1 A
fT VCB = 6 V, IE = -50 mA, f = 200 MHz
Cob VCB = 20 V, IE = 0, f = 1 MHz
Min Typ Max Unit
25 V
7V
0.1 ìA
230 600
150
1V
150 MHz
50 pF
hFE Classification
Marking
Rank
hFE
T
QR
230 380
340 600
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| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2SD1119.PDF ] | |
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