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Datasheet GTCX255301M5R02-PDF.HTML Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
GTC Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | GTC-16022 | Display Module GTC-16022
( 16 characters ¡Á2 line )
1/16 DUTY, 1/5 BIAS
1. DIMENSIONAL OUTLINE
2. BLOCK DIAGRAM
3. MECHANICAL SPECIFICATIONS
ITEM DIMENSIONAL OUTLINE VIEWING AREA CHARACTER PITCH CHARACTER SIZE NUMBER OF CHARACTERS DOT PITCH DOT SIZE ITEM INPUT HIGH VOLTAGE INPUT LOW VOLTAGE OUTPUT HIGH VOLTA  ETC display | | |
| 2 | GTC217E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/08/21 REVISED DATE :2006/12/25B
GTC217E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 22m 7A
The GTC217E used advanced trench technology to provide excellent on-resistance extremely efficient and cost-effectiveness dev  GTM mosfet | | |
| 3 | GTC220E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2006/09/13 REVISED DATE :
GTC220E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 30m 5A
The GTC220E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on- GTM mosfet | | |
| 4 | GTC9922E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2007/01/25 REVISED DATE :
GTC9922E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 15m 6.8A
The GTC9922E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and GTM mosfet | | |
| 5 | GTC9926 | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2004/10/18 REVISED DATE :2006/07/27B
GTC9926
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 28m 6A
Description
The GTC9926 provides the designer with the best combination of fast switching, ruggedized device design, ultra l GTM mosfet | | |
| 6 | GTC9926E | N-CHANNEL ENHANCEMENT MODE POWER MOSFET
ISSUED DATE :2005/01/07 REVISED DATE :2006/12/25B
GTC9926E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 28m 4.6A
The GTC9926E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiv GTM mosfet | | |
| 7 | GTCX25-XXXM-R02 | Gas Discharge Tubes Gas Discharge Tubes GTCX25-XXXM-R02 Series
TE Circuit Protection 5mm 2Pole GDTs (ceramic gas discharge tubes), are commonly used to help protect sensitive telecom equipment such as communication lines, signal lines and data transmission lines from damage caused by transient surge voltages that typic  Tyco data | |
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