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NTTFS3A08P fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTTFS3A08P
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
Logo ON Semiconductor 





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NTTFS3A08P fiche technique
NTTFS3A08P
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Power MOSFET
20 V, 14 A, Single PChannel, m8FL
Features
Ultra Low RDS(on) to Minimize Conduction Losses
m8FL 3.3 x 3.3 x 0.8 mm for Space Saving and Excellent Thermal
Conduction
ESD Protection Level of 5 kV per JESD22A114
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Battery/Switch
High Side Load Switch
Optimized for Power Management Applications for Portable
Products such as Media Tablets, Ultrabook PCs and Cellphones
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
(Note 1)
RqJA
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
PD
20 V
±8 V
14 A
10
2.2 W
Continuous Drain
C(Nuortreen1t)RqJA 10 s
Power Dissipation
RqJA 10 s (Note 1)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
20 A
15
4.5 W
Continuous Drain
Current RqJA (Note 2)
Power Dissipation
RqJA (Note 2)
TA = 25°C
TA = 85°C
TA = 25°C
ID
PD
9 A
6
0.84 W
Pulsed Drain Current
TA = 25°C, tp = 10 ms
IDM
43 A
Operating Junction and Storage Temperature
TJ, 55 to °C
Tstg +150
ESD (HBM, JESD22A114)
VESD
5000
V
Source Current (Body Diode)
IS 6 A
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
V(BR)DSS
20 V
RDS(on) MAX
6.7 mW @ 4.5 V
9.0 mW @ 2.5 V
ID MAX
14 A
PChannel MOSFET
G
D
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S XXXX D
S AYWWG D
GGD
XXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTTFS3A08PTAG WDFN8 1500 / Tape &
(PbFree)
Reel
NTTFS3A08PTWG WDFN8 1500 / Tape &
(PbFree)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
June, 2012 Rev. P0
1
Publication Order Number:
NTTFS3A08P/D
Free Datasheet http://www.datasheet4u.com/

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