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NTTFS4800N fiches techniques PDF

ON Semiconductor - Power MOSFET ( Transistor )

Numéro de référence NTTFS4800N
Description Power MOSFET ( Transistor )
Fabricant ON Semiconductor 
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NTTFS4800N fiche technique
NTTFS4800N
Power MOSFET
30 V, 32 A, Single NChannel, m8FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DCDC Converters
Point of Load
Power Load Switch
Notebook Battery Management
Motor Control
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation
(Note 1)
RqJA
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
8.3 A
TA = 85°C
6.0
TA = 25°C
PD
2.2 W
Continuous Drain
C(Nuortreen1t)RqJA 10 s
TA = 25°C
TA = 85°C
ID
11.8 A
8.5
Power Dissipation
RqJA 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
Power Dissipation
RqJA (Note 2)
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Current Limited by Pkg.
TA = 25°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source DV/DT
PD
ID
PD
ID
PD
IDM
IDmaxPkg
TJ,
Tstg
IS
dV/dt
4.5 W
5.0 A
3.6
0.86 W
32 A
23
33.8 W
57
20
55 to
+150
28
6.0
A
A
°C
A
V/ns
Single Pulse DraintoSource Avalanche Energy EAS 36.6 mJ
(TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 27 Apk, L = 0.1 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
October, 2009 Rev. 0
1
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
20 mW @ 10 V
27 mW @ 4.5 V
ID MAX
32 A
NChannel MOSFET
D (58)
G (4)
1
WDFN8
(m8FL)
CASE 511AB
S (1,2,3)
MARKING DIAGRAM
1
SD
S 4800 D
S AYWWG D
GGD
4800
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTTFS4800NTAG WDFN8 1500/Tape & Reel
(PbFree)
NTTFS4800NTWG WDFN8 5000/Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTTFS4800N/D
Free Datasheet http://www.datasheet4u.com/

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