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PDF DMS935E1 Data sheet ( Hoja de datos )
| Número de pieza | DMS935E1 | |
| Descripción | Silicon NPN epitaxial planar type | |
| Fabricantes | Panasonic | |
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This product complies with the RoHS Directive (EU 2002/95/EC).
DMS935E1
Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)
For CCD output circuits
Features
Two elements incorporated into one package (Tr + CCD load device)
High transition frequency fT
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Basic Part Number
DSC2G03 + CCD load device (Individual)
Packaging
Embossed type (Thermo-compression sealing): 8000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Collector-base voltage (Emitter open) VCBO
Collector-emitter voltage (Base open)
Tr1
Emitter-base voltage (Collector open)
VCEO
VEBO
Collector current
IC
CCD Limiting element voltage
load device Limiting element current
Vmax
Imax
Total power dissipation *
PT
Overall Junction temperature
Tj
Storage temperature
Tstg
Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm
30
20
3
50
40
10
125
150
–55 to +150
Unit
V
V
V
mA
V
mA
mW
°C
°C
Package
Code
SSMini6-F3-B
Pin Name
1: Emitter
2: Base
3: Gate
4: Source
5: Drain
6: Collector
Marking Symbol: X0
Internal Connection
(C) (D) (S)
6 54
Tr FET
12 3
(E) (B) (G)
Electrical Characteristics Ta = 25°C±3°C
Tr1
Parameter
Symbol
Conditions
Min Typ Max
Collector-base voltage (Emitter open)
VCBO IC = 100 µA, IE = 0
30
Emitter-base voltage (Collector open)
VEBO IE = 10 µA, IC = 0
3
Base-emitter voltage
VBE VCE = 10 V, IC = 2 mA
740
Forward current transfer ratio
hFE VCE = 10 V, IC = 2 mA
100 250
Transition frequency
fT VCE = 10 V, IC = 15 mA
1 300
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Unit
V
V
mV
MHz
CCD load device
Parameter
Symbol
Conditions
Min Typ Max
Pinchi off current
IP VDS = 10 V, VG = 0
3.8
Output impedance
ZO VDS = 10 V, VG = 0
0.05
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
5.2
Unit
mA
mW
Publication date: December 2010
Ver. BED
1
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