(PDF) HL8325G Datasheet - GaAlAs Laser Diode

Número de pieza	HL8325G
Descripción	GaAlAs Laser Diode
Fabricantes	Hitachi Semiconductor
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No Preview Available ! HL8325G GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of optical equipment. Features • Infrared light output: λp = 820 to 840 nm • High power: standard continuous operation at 40 mW (CW), pulsed operation at 50 mW • Built-in monitor photodiode • Single longitudinal mode 190 1 page

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PDF HL8325G Data sheet ( Hoja de datos )