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Número de pieza | WFW20N50 | |
Descripción | N-Channel MOSFET | |
Fabricantes | Wisdom | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de WFW20N50 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! Wisdom Semiconductor
WFW20N50
N-Channel MOSFET
Features
■ RDS(on) (Max 0.26 Ω )@VGS=10V
■ Gate Charge (Typical 90nC)
■ Improved dv/dt Capability, High Ruggedness
■ 100% Avalanche Tested
■ Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
Symbol
1. Gate{
TO-247
{ 2. Drain
●
◀▲
●
●
{ 3. Source
G DS
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
EAR
dv/dt
PD
TSTG, TJ
TL
Parameter
Drain to Source Voltage
Continuous Drain Current(@TC = 25°C)
Continuous Drain Current(@TC = 100°C)
Drain Current Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case to Sink
Thermal Resistance, Junction-to-Ambient
Min.
-
-
-
(Note 1)
(Note 2)
(Note 1)
(Note 3)
Value
500
20
13
80
±30
1110
25.0
4.5
250
2.00
- 55 ~ 150
300
Value
Typ.
-
0.24
-
Max.
0.50
-
40
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/°C
°C
°C
Units
°C/W
°C/W
°C/W
Copyright@Wisdom Semiconductor Inc., All rights reserved.
Free Datasheet http://www.datasheet4u.com/
1 page Gate Charge Test Circuit & Waveform
50KΩ
SameType
asDUT
12V
200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs
Qgd
3mA
DUT
Charge
10V
Resistive Switching Test Circuit & Waveforms
VDS
VGS
RG
RL
VDD
DUT
VDS 90%
VGS10%
td(on)
tr
ton
td(off)
tf
toff
10V
tp
Unclamped Inductive Switching Test Circuit & Waveforms
RG
VDS
ID
L
DUT
EAS=--21--LIAS2
------B--V--D--S-S-------
BVDSS-VDD
BVDSS
IAS
VDD
ID(t)
VDD
VDS(t)
tp Time
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet WFW20N50.PDF ] |
Número de pieza | Descripción | Fabricantes |
WFW20N50 | N-Channel MOSFET | Wisdom |
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