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What is HMP112S6EFR6C-S6?

This electronic component, produced by the manufacturer "Hynix", performs the same function as "200pin Unbuffered DDR2 SDRAM SO-DIMMs".


HMP112S6EFR6C-S6 Datasheet PDF - Hynix

Part Number HMP112S6EFR6C-S6
Description 200pin Unbuffered DDR2 SDRAM SO-DIMMs
Manufacturers Hynix 
Logo Hynix Logo 


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200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 1Gb version E
This Hynix unbuffered Small Outline Dual In-Line Memory Module (DIMM) series consists of 1Gb version E DDR2
SDRAMs in Fine Ball Grid Array (FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 1Gb version E based
Unbuffered DDR2 SO-DIMM series provide a high performance 8 byte interface in 67.60mm width form factor of indus-
try standard. It is suitable for easy interchange and addition.
FEATURES
• JEDEC standard Double Data Rate 2 Synchronous
DRAMs (DDR2 SDRAMs) with 1.8V +/- 0.1V Power
Supply
• All inputs and outputs are compatible with SSTL_1.8
interface
• Posted CAS
• Programmable CAS Latency 3,4,5, and 6
• OCD (Off-Chip Driver Impedance Adjustment) and
ODT (On-Die Termination)
• Fully differential clock operations (CK & CK)
• Programmable Burst Length 4 / 8 with both
sequential and interleave mode
• Auto refresh and self refresh supported
• 8192 refresh cycles / 64ms
• Serial presence detect with EEPROM
• DDR2 SDRAM Package: 60 ball(x8), 84 ball(x16)
FBGA
• 67.60 x 30.00 mm form factor
• RoHS compliant & Halogen-free
* This product is in compliance with the directive pertaining of RoHS
ORDERING INFORMATION
Part Name
HMP164S6EFR6C-C4/Y5/S5/S6
HMP112S6EFR6C-C4/Y5/S5/S6
HMP125S6EFR8C-C4/Y5/S5/S6
Density Organization
512MB
1GB
2GB
64Mx64
128Mx64
256Mx64
# of
DRAMs
4
8
16
# of
ranks
1
2
2
Materials
Halogen free
Halogen free
Halogen free
This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.3 / Dec. 2009
1
Free Datasheet http:/

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HMP112S6EFR6C-S6 equivalent
1200pin Unbuffered DDR2 SDRAM SO-DIMMs
FUNCTIONAL BLOCK DIAGRAM
512MB(64Mbx64): HMP164S6EFR6C
DQS0
/DQS0
DM0
DQS2
/DQS2
DM2
CKE0
ODT0
/S0
3+/-5%
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
LDQS
/UDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
UDQS
/UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
/S1
ODT1
CKE1
/CS ODT CKE
D0
DQS2
/DQS2
DM2
DQS3
/DQS3
DM3
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ24
DQ25
DQ26
DQ27
DQ28
DQ29
DQ30
LDQS
/UDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
UDQS
/UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
/CS ODT CKE
D1
N.C.
N.C.
N.C.
DQS4
/DQS4
DM4
DQS5
/DQS5
DM5
DQS6
/DQS6
DM6
DQS7
/DQS7
DM7
DQ32
DQ33
DQ34
DQ35
DQ36
DQ37
DQ38
DQ39
DQ40
DQ41
DQ42
DQ43
DQ44
DQ45
DQ46
DQ47
DQ48
DQ49
DQ50
DQ51
DQ52
DQ53
DQ54
DQ55
DQ56
DQ57
DQ58
DQ59
DQ60
DQ61
DQ62
DQ63
LDQS
/UDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
UDQS
/UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
LDQS
/UDQS
LDM
I/O 0
I/O 1
I/O 2
I/O 3
I/O 4
I/O 5
I/O 6
I/O 7
UDQS
/UDQS
UDM
I/O 8
I/O 9
I/O 10
I/O 11
I/O 12
I/O 13
I/O 14
I/O 15
/CS ODT CKE
D2
/CS ODT CKE
D3
BA0-BA2
A0-AN
/RAS
/CAS
/WE
3+/-5%
SDRAMS D0-3
SDRAMS D0-3
SDRAMS D0-3
SDRAMS D0-3
SDRAMS D0-3
CK0
/CK0
CK1
/CK1
2 loads
2 loads
Rev. 0.3 / Dec. 2009
SCL
SA0
SCL
A0
Serial PD
SDA
SDA
SA1 A1
A2 WP
VDDSPD
VREF
VDD
VSS
Serial PD
SDRAMS D0-D3
SDRAMS D0-D3, VDD and VDDQ
SDRAMS D0-D3, SPD
Note:
1.Resistor values are 22 ohm +/-5%.
5
Free Datasheet http://www.datasheet4u.com/


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Featured Datasheets

Part NumberDescriptionMFRS
HMP112S6EFR6C-S5The function is 200pin Unbuffered DDR2 SDRAM SO-DIMMs. HynixHynix
HMP112S6EFR6C-S6The function is 200pin Unbuffered DDR2 SDRAM SO-DIMMs. HynixHynix

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