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Numéro de référence | BC847A-G | ||
Description | (BC84xx-G) Small Signal Transistor | ||
Fabricant | Comchip | ||
Logo | |||
1 Page
Small Signal Transistor
BC846A-G Thru. BC848C-G (NPN)
RoHS Device
Features
-Power dissipation
PCM: 0.20W (@TA=25 OC)
-Collector current
ICM: 0.1A
-Collector-base voltage
VCBO: BC846=80V
BC847=50V
BC848=30V
-Operating and storage junction temperature
range: TJ, TSTG= -65 to +150 OC
Mechanical data
-Case: SOT-23, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Approx. weight: 0.008 grams
Circuit diagram
-1.BASE
-2.EMITTER
-3.COLLECTOR
3
SOT-23
0.055(1.40)
0.047(1.20)
0.041(1.05)
0.035(0.90)
0.118(3.00)
0.110(2.80)
3
12
0.079(2.00)
0.071(1.80)
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.004(0.10) max
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
12
Maximum
Ratings
(at Ta=25
O
C unless otherwise noted)
Parameter
Symbol
Collector-Base Voltage
BC846-G
BC847-G
BC848-G
VCBO
Collector-Emitter Voltage
BC846-G
BC847-G
BC848-G
VCEO
Emitter-Base Voltage
VEBO
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
IC
PC
TJ
TSTG
Value
80
50
30
65
45
30
6
0.1
200
150
-65 to +150
UNIT
V
V
V
A
mW
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR31
Comchip Technology CO., LTD.
REV:B
Page 1
Free Datasheet http://www.datasheet4u.com/
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Pages | Pages 5 | ||
Télécharger | [ BC847A-G ] |
No | Description détaillée | Fabricant |
BC847A-7 | NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | Diodes Incorporated |
BC847A-G | (BC84xx-G) Small Signal Transistor | Comchip |
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US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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