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IPI50N10S3L-16 fiches techniques PDF

Infineon - Power Transistor

Numéro de référence IPI50N10S3L-16
Description Power Transistor
Fabricant Infineon 
Logo Infineon 





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IPI50N10S3L-16 fiche technique
OptiMOS®-T Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB50N10S3L-16
IPI50N10S3L-16, IPP50N10S3L-16
Product Summary
V DS
R DS(on),max (SMD version)
ID
100 V
15.4 m
50 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB50N10S3L-16
IPI50N10S3L-16
IPP50N10S3L-16
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N10L16
3N10L16
3N10L16
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V1)
Pulsed drain current1)
I D,pulse T C=25 °C
Avalanche energy, single pulse1) E AS I D=25A
Avalanche current, single pulse
I AS
Gate source voltage2)
V GS
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
50
37
200
330
50
±20
100
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 1.1
page 1
2008-04-09
Free Datasheet http://www.datasheet4u.com/

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