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IPB80N03S4L-03 fiches techniques PDF

Infineon - Power-Transistor

Numéro de référence IPB80N03S4L-03
Description Power-Transistor
Fabricant Infineon 
Logo Infineon 





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IPB80N03S4L-03 fiche technique
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB80N03S4L-03
IPI80N03S4L-04, IPP80N03S4L-04
Product Summary
V DS
R DS(on),max (SMD version)
ID
30 V
3.4 m
80 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB80N03S4L-03
IPI80N03S4L-04
IPP80N03S4L-04
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N03L03
4N03L04
4N03L04
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS I D=80 A
Avalanche current, single pulse I AS T C=25 °C
Gate source voltage
V GS
-
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg -
IEC climatic category; DIN IEC 68-1 -
-
Value
80
80
320
95
80
±16
94
-55 ... +175
55/175/56
Unit
A
mJ
A
V
W
°C
Rev. 2.1
page 1
2010-03-08
Free Datasheet http://www.datasheet4u.com/

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