(PDF) KPA2790GR Datasheet - MOS Field Effect Transistor

Número de pieza	KPA2790GR
Descripción	MOS Field Effect Transistor
Fabricantes	Kexin
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No Preview Available ! SMD Type MOS Field Effect Transistor KPA2790GR Features Low on-state resistance N-channel RDS(on)1 = 28 m MAX. (VGS = 10 V, ID = 3 A) RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 3 A) P-channel RDS(on)1 = 60 m MAX. (VGS = -10 V, ID = -3 A) RDS(on)2 = 80 m MAX. (VGS = -4.5 V, ID = -3 A) Low input capacitance N-channel Ciss = 500 pF TYP. P-channel Ciss = 460 pF TYP. Built-in gate protection diode Small and surface mount package ICIC Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) 1 Total Power Dissipation (1 unit) 2 Total Power Dissipation (2 units) 2 Channel Temperature Storage Temperature Single Avalanche Current 3 Single Avalanche Energy 3 Symbol VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg IAS EAS N-Channel P- Channel 30 -30 20 20 66 24 1.7 24 2 150 -55 to +150 6 -6 3.6 3.6 1 PW 10 s, Duty Cycle 1% 2 Mounted on ceramic substrate of 2000 mm2 x 1.6 mm 3 Starting Tch = 25 , VDD =1/2 X VDSS, RG = 25 , L = 100 H, VGS = VGSS 0V Unit V V A A W W A mJ www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.co 1 page

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PDF KPA2790GR Data sheet ( Hoja de datos )