(PDF) KPA1750 Datasheet - MOS Field Effect Transistor

Número de pieza	KPA1750
Descripción	MOS Field Effect Transistor
Fabricantes	Kexin
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No Preview Available ! SMD Type MOS Field Effect Transistor KPA1750 ICIC Features Dual MOSFET chips in small package 4V Gate Drive Type and Low On-Resistance RDS(on)1 = 0.09 TYP. (VGS = -10 V, ID = -1.8 A) RDS(on)2 = 0.18 TYP. (VGS = -4 V, ID = -1.8A) Low Ciss : Ciss = 540 pF TYP. Built-in G-S protection diode Small and surface mount package 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Ta = 25 Drain Current (Pulse) 1 Total Power DissipationTa = 25 2 Total Power DissipationTa = 25 2 Channel Temperature Storage Temperature 1 PW 10 s, Duty cycle 1 % *2 Mounted on ceramic substrate of 1200mm2 X1.0 mm Symbol VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg Rating -20 20 3.5 14 1.7 2.0 150 -55 to + 150 Unit V V A A W W www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ 1 page

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PDF KPA1750 Data sheet ( Hoja de datos )