(PDF) KPA1790 Datasheet - MOS Field Effect Transistor

Número de pieza	KPA1790
Descripción	MOS Field Effect Transistor
Fabricantes	Kexin
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No Preview Available ! SMD Type MOS Field Effect Transistor KPA1790 Features Dual chip type Low on-state resistance N-channel RDS(on)1 = 0.12 TYP. (VGS = 10 V, ID = 0.5 A) RDS(on)2 = 1.19 TYP. (VGS = 4 V, ID = 0.5 A) P-channel RDS(on)1 = 0.45 TYP. (VGS = -10 V, ID = -0.35 A) RDS(on)2 = 0.74 TYP. (VGS = -4 V, ID = -0.35 A) Low input capacitance N-channel Ciss = 180 pF TYP. P-channel Ciss = 230 pF TYP. Built-in G-S protection diode Small and surface mount package ICIC Absolute Maximum Ratings Ta = 25 Parameter Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) 1 Total Power Dissipation (1 unit) 2 Total Power Dissipation (2 units) 2 Channel Temperature Storage Temperature Single Avalanche Current 3 Single Avalanche Energy 3 Symbol VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg IAS EAS 1. PW 10 s, Duty Cycle 1% 2. Mounted on ceramic substrate of 2000 mm2 X 2.25 mm 3. Starting Tch = 25 , VDD = 30 V, RG = 25 , VGS = 20 0 V N-Channel P- Channel 60 -60 20 20 1.0 0.7 4.0 1.7 2.8 2 150 -55 to +150 0.5 -0.35 0.02 0.01 Unit V V A A W W A mJ www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.co 1 page

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PDF KPA1790 Data sheet ( Hoja de datos )