(PDF) KPA1816 Datasheet - MOS Field Effect Transistor

Número de pieza	KPA1816
Descripción	MOS Field Effect Transistor
Fabricantes	Kexin
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No Preview Available ! SMD Type MOS Field Effect Transistor KPA1816 ICIC Features 1.8V drive available Low on-state resistance RDS(on)1 = 15 m TYP. (VGS = -4.5 V, ID = -4.5 A) RDS(on)2 = 16 m TYP. (VGS = -4.0 V, ID = -4.5 A) RDS(on)3 = 22.5 m TYP. (VGS = -2.5 V, ID = -4.5 A) RDS(on)4 = 41.5 m TYP. (VGS = -1.8 V, ID = -2.5 A) Built-in G-S protection diode against ESD TSSOP-8 Unit: mm 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Drain to Source Voltage (VGS = 0) VDSS Gate to Source Voltage (VDS = 0) VGSS Drain Current (DC) Ta = 25 ID(DC) Drain Current (Pulse) 1 ID(pulse) Total Power Dissipation(2 unit) 2 PT Channel Temperature Tch Storage Temperature Tstg 1 PW 10 s, Duty cycle 1 % 2 Mounted on ceramic substrate of 5000mm2 X1.1 mm Rating -12 8.0 9.0 36 2.0 150 -55 to + 150 Unit V V A A W www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ 1 page

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PDF KPA1816 Data sheet ( Hoja de datos )