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DMN66D0LW fiches techniques PDF

Diodes - N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Numéro de référence DMN66D0LW
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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DMN66D0LW fiche technique
DMN66D0LW
Features
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Mechanical Data
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
ESD Protected Gate, 1KV (HBM)
Lead Free/RoHS Compliant (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
SOT-323
Case: SOT-323
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Solderable per MIL-STD-202, Method 208
Lead Free Plating (Matte Tin Finish annealed over Alloy 42
leadframe).
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
Drain
D
ESD PROTECTED, 1KV
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage (Note 1)
Drain Current (Note 1)
Continuous
Continuous
Continuous @ 100°C
Pulsed
Gate
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
GS
TOP VIEW
Symbol
VDSS
VGSS
ID
Value
60
±20
115
73
800
Units
V
V
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
200
625
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 3)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Symbol Min Typ Max Unit
Test Condition
BVDSS 60 70 V VGS = 0V, ID = 10μA
@ TC = 25°C
@ TC = 125°C
IDSS
1.0
500
µA VDS = 60V, VGS = 0V
IGSS
⎯ ⎯ ±5 μA VGS = ±20V, VDS = 0V
VGS(th) 1.2 2.0 V VDS = VGS, ID = 250μA
@ TJ = 25°C
@ TJ = 125°C
RDS (ON)
3.5
3.0
6
5
Ω VGS = 5.0V, ID = 0.115A
VGS = 10V, ID = 0.115A
gFS 80 ⎯ ⎯ mS VDS = 10V, ID = 0.115A
Ciss
Coss
Crss
23 pF
3.4 pF VDS = 25V, VGS = 0V, f = 1.0MHz
1.4 pF
tD(ON) 10 ns VDD = 30V, ID = 0.115A, RL = 150Ω,
tD(OFF) 33 ns VGEN = 10V, RGEN = 25Ω
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Short duration pulse test used to minimize self-heating effect.
DMN66D0LW
Document number: DS31483 Rev. 1 - 2
1 of 4
www.diodes.com
July 2008
© Diodes Incorporated
Free Datasheet http://www.datasheet4u.com/

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