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NTD4863N Datasheet دیتاشیت PDF دانلود

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شماره قطعه NTD4863N
شرح مفصل Power MOSFET
تولید کننده ON Semiconductor 
آرم ON Semiconductor 


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NTD4863N شرح
NTD4863N
Power MOSFET
25 V, 49 A, Single N--Channel, DPAK/IPAK
Features
Trench Technology
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb--Free Devices
Applications
VCORE Applications
DC--DC Converters
High Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain--to--Source Voltage
Gate--to--Source Voltage
Continuous Drain
Current RθJA
(Note 1)
TA = 25°C
VDSS
VGS
ID
25
±20
11.3
V
V
A
TA = 85°C
8.8
Power Dissipation
RθJA (Note 1)
Continuous Drain
Current RθJA
(Note 2)
Power Dissipation
RθJA (Note 2)
Continuous Drain
Current RθJC
(Note 1)
TA = 25°C
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
PD
ID
1.95 W
9.2 A
7.1
1.27 W
49 A
38
Power Dissipation
RθJC (Note 1)
Pulsed Drain
Current
TC = 25°C
tp=10ms TA = 25°C
PD
IDM
36.6 W
98 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain--to--Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 11 Apk, L = 1.0 mH, RG = 25 Ω)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDmaxPkg
TJ,
TSTG
IS
dV/dt
EAS
TL
35
--55 to
+175
30.5
6
60.5
260
A
°C
A
V/ns
mJ
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
25 V
RDS(ON) MAX
9.3 mΩ @ 10 V
14 mΩ @ 4.5 V
D
ID MAX
49 A
G
S
N--CHANNEL MOSFET
4
4
4
12
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
1 23
1 23
CASE 369AC CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y = Year
WW = Work Week
4863N = Device Code
G = Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
June, 2010 -- Rev. 2
1
Publication Order Number:
NTD4863N/D
Free Datasheet http://www.datasheet4u.com/

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