|
|
Número de pieza | NTD24N06 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NTD24N06 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! NTD24N06
Power MOSFET
60 V, 24 A, N−Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C, TJ = 150°C
− Continuous @ TA = 25°C, TJ = 175°C
− Continuous @ TA = 100°C, TJ = 175°C
− Single Pulse (tpv10 ms), TJ = 175°C
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
60
60
"20
"30
Vdc
Vdc
Vdc
ID
ID
ID
IDM
PD
TJ, Tstg
24 Adc
27 Adc
19 Adc
80 Apk
62.5 W
0.42 W/°C
1.88 W
1.36 W
−55 to °C
+175
Single Pulse Drain−to−Source Avalanche Ener-
gy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc,
L = 1.0 mH, IL(pk) = 18 A, VDS = 60 Vdc)
EAS
162 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
RRqqJJCA
RqJA
°C/W
2.4
80
110
Maximum Lead Temperature for Soldering Pur-
poses, 1/8″ from case for 10 seconds
TL
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR−4 board using the 0.5 sq in drain pad size.
2. When surface mounted to an FR−4 board using the minimum recommended
pad size.
http://onsemi.com
V(BR)DSS
60 V
RDS(on) TYP
32 mW
ID MAX
24 A
N−Channel
D
G
4
12
3
DPAK
CASE 369C
Style 2
4
S
MARKING DIAGRAMS
4
Drain
1
Gate
2
Drain
3
Source
4
Drain
1 23
DPAK
CASE 369D
Style 2
12 3
Gate Drain Source
24N06 = Device Code
Y = Year
WW = Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 3
1
Publication Order Number:
NTD24N06/D
Free Datasheet http://www.datasheet4u.com/
1 page NTD24N06
12 1000
10
8
6 Q1
QT
Q2
VGS
4
2
0
04
ID = 24 A
TJ = 25°C
8 12 16 20 24 28
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−To−Source and Drain−To−Source
Voltage versus Total Charge
100
tr
td(off)
10
td(on)
tf
VDS = 30 V
ID = 24 A
VGS = 10 V
1
1 10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation versus Gate Resistance
DRAIN−TO−SOURCE DIODE CHARACTERISTICS
24
VGS = 0 V
20 TJ = 25°C
16
12
8
4
0
0.6 0.68 0.76 0.84 0.92
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
1
Figure 10. Diode Forward Voltage versus Current
SAFE OPERATING AREA
The Forward Biased Safe Operating Area curves define
the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (TC) of 25°C.
Peak repetitive pulsed power limits are determined by using
the thermal response data in conjunction with the procedures
discussed in AN569, “Transient Thermal Resistance −
General Data and Its Use.”
Switching between the off−state and the on−state may
traverse any load line provided neither rated peak current
(IDM) nor rated voltage (VDSS) is exceeded and the
transition time (tr,tf) do not exceed 10 ms. In addition the total
power averaged over a complete switching cycle must not
exceed (TJ(MAX) − TC)/(RqJC).
A Power MOSFET designated E−FET can be safely used
in switching circuits with unclamped inductive loads. For
reliable operation, the stored energy from circuit inductance
dissipated in the transistor while in avalanche must be less
than the rated limit and adjusted for operating conditions
differing from those specified. Although industry practice is
to rate in terms of energy, avalanche energy capability is not
a constant. The energy rating decreases non−linearly with an
increase of peak current in avalanche and peak junction
temperature.
Although many E−FETs can withstand the stress of
drain−to−source avalanche at currents up to rated pulsed
current (IDM), the energy rating is specified at rated
continuous current (ID), in accordance with industry custom.
The energy rating must be derated for temperature as shown
in the accompanying graph (Figure 12). Maximum energy at
currents below rated continuous ID can safely be assumed to
equal the values indicated.
http://onsemi.com
5
Free Datasheet http://www.datasheet4u.com/
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet NTD24N06.PDF ] |
Número de pieza | Descripción | Fabricantes |
NTD24N06 | Power MOSFET ( Transistor ) | ON Semiconductor |
NTD24N06L | Power MOSFET ( Transistor ) | ON Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |