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Toshiba - High-Voltage Switching Applications

Numéro de référence 2SA2142
Description High-Voltage Switching Applications
Fabricant Toshiba 
Logo Toshiba 





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2SA2142 fiche technique
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA2142
2SA2142
High-Voltage Switching Applications
Unit: mm
High breakdown voltage: VCEO = 600 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEO
600
V
Emitter-base voltage
VEBO 7 V
Collector current
DC
Pulse
IC
ICP
0.5
A
1
Base current
IB
0.25
A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Pc
1
W
15
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
55 to 150
°C
JEDEC
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
TOSHIBA
2-7J1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.36 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-12-21
Free Datasheet http://www.datasheet4u.com/

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