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PDF 2SA1201-Y Data sheet ( Hoja de datos )
| Número de pieza | 2SA1201-Y | |
| Descripción | PNP Silicon Power Transistors | |
| Fabricantes | MCC | |
| Logotipo |  |
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MCC
TM
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
Features
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
• Power amplifier applications
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Maximum Ratings
Symbol
VCEO
VCBO
VEBO
IC
IB
PC
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector power dissipation
TJ Junction Temperature
TSTG
Storage Temperature
Note 1: Mounted on ceramic substrate (250mm2 x 0.8t)
Rating
-120
-120
-5.0
-800
-160
500
1000(Note 1)
150
-55 to +150
Unit
V
V
V
mA
mA
W
к
к
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min Typ. Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
(IC=-10mAdc, IB=0)
-120
---
---
Vdc
V(BR)EBO Collector-Emitter Breakdown Voltage* -5 ---
(IE=-1mAdc, IC=0)
Vdc
ICBO Collector-Base Cutoff Current
(VCB=-120Vdc,IE=0)
--- --- -0.1 uAdc
IEBO Emitter-Base Cutoff Current
(VEB=-5.0Vdc, IC=0)
--- --- -0.1 uAdc
ON CHARACTERISTICS
hFE
VCE(sat)
VBE
fT
Cob
Forward Current Transfer ratio
(IC=-0.1Adc, VCE=-5.0Vdc) (Note 2)
Collector-Emitter Saturation Voltage
(IC=-0.5Adc, IB=-50mAdc)
Base-Emitter Voltage
(IC=-0.5Adc, VCE=-5.0Vdc)
Transition Frequency
(IC=-0.1Adc, VCE=-5.0Vdc)
Collector Output Capacitance
(VCB=-10V, IE=0, f=1MHz)
80 --- 240
--- --- -1.0
--- --- -1.0
--- 120 ---
--- --- 30
---
Vdc
Vdc
MHz
pF
CLASSIFICATION OF HFE (1)
Rank
Range
O
80-160
Y
120-240
Marking
DO
DY
2SA1201-O
2SA1201-Y
PNP Silicon
Power Transistors
SOT-89
A
B
K
E
C
D
G
H
F
J
12 3
1.BASE
2.COLLECTOR
3.EMITTER
25
Revision: A
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| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet 2SA1201-Y.PDF ] | |
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